LATTICE SPACINGS OF LEC-GROWN AND MLEC-GROWN GAAS CRYSTALS

被引：3

作者：

YASUAMI, S ^{[1
]}

USUDA, K ^{[1
]}

HIGASHI, Y ^{[1
]}

KAWATA, H ^{[1
]}

ANDO, M ^{[1
]}

机构：

[1] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 100卷 / 03期

关键词：

D O I：

10.1016/0022-0248(90)90258-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Lattice spacings (d) were measured with an accuracy of 5.9 x 10-6 in terms of Δd/d, using a diffractometer with a Si monolithic monochromator. For crystals with 104 -105 cm-2 order of dislocation density, the lattice spacing varied in the 10-5 order of magnitude. This variation was attributed to the residual strains in the crystals. There was no definite evidence to prove that lattice spacings depend either on initial melt compositions or on dislocation density. © 1990.

引用

页码：600 / 604

页数：5

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