Effects of annealing in Be/W and Be/C bilayers deposited on Si(001) substrates with Fe buffer layers

Atomic intermixing processes in relation to structural aspects and phase formation in Be based thin films subjected to different annealing treatments simulating the case of re-deposited layered structures on plasma facing components in nuclear fusion devices are reported. Accordingly, bilayers of Be/W and Be/C have been deposited on Si(001) substrates with Fe buffer layers. The Fe films have been prepared by radiofrequency sputtering and further processed by annealing in hydrogen atmosphere at 300 degrees C, for 90 min, at a pressure of 10 bars of H-2. After the Be/W and Be/C bilayer deposition by means of thermionic vacuum arc method, annealing in vacuum at 600 degrees C, for 10 min has been applied to the complex structures. The influence of annealing on the phase composition and atomic intermixing processes in the complex structures has been studied by means of X-ray photoelectron spectroscopy (XPS) and conversion electron Mossbauer spectroscopy (CEMS). The layered structures present an oxidation gradient with oxide phases in the uppermost layers and non-oxidized phases in the lower layers, as observed from the XPS data. The CEMS results revealed that the as-deposited structures contain a main metallic Fe phase and secondary superparamagnetic Fe oxide phases at the Fe/Be interface, while annealed samples present a large contribution of Fe-Be and Fe-C mixtures. The annealing treatment induces considerable atomic interdiffusion, strongly dependent on the nature of the upper layer. In the case of Be/W system, the annealing provides a much rougher Be/W interface, while in case of the Be/C structure, the annealing treatment only homogenize the structure over the whole depth. (C) 2014 Elsevier B.V. All rights reserved.