Effects of annealing on luminescence of ZnO films deposited on Si substrates by RF magnetron sputtering

被引：0
|
作者：
Ning, ZY [1 ]
Li, HQ [1 ]
机构：
[1] Suzhou Univ, Dept Phys, Prov Key Lab Thin Film Mat, Suzhou 215006, Peoples R China
来源：
PLASMA SCIENCE & TECHNOLOGY | 2005年 / 7卷 / 01期
关键词：
ZnO; photoluminescence; annealing;
D O I：
暂无
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
Effects of growth ambience, annealing ambience and temperature on the photoluminescence (PL) emission properties of ZnO films deposited on Si (100) substrates by RF magnetron sputtering have been investigated. After annealing, the crystal quality of ZnO films was markedly improved, and the intensity of UV emission peak increased obviously. By varying the flow rate ratio of 0(2)/Ar, annealing atmosphere in oxygen-deficient or oxygen-rich ambience and heating temperature during deposition, the evolution of peak intensities and positions for blue and green emission is formed. This is attributed to the deposition and annealing parameters that control the desorptions and adsorptions of oxygen atoms on the films, and leads to the changes of concentrations of Zinc and oxygen vacancies in the films.
引用
收藏
页码：2665 / 2668
页数：4
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