Structure and Morphology of ZnO Films, Deposited on Si3N4/Si Substrates by RF Magnetron Sputtering

被引：0
|
作者：
Evtushenko, A. I. [1 ]
Khranovs'kiy, B. D. [1 ]
Loshkarov, G. V. [1 ]
Bikov, O. I. [1 ]
Lazorenko, V. Yi [1 ]
Karpina, V. A. [1 ]
Klochkov, L. O. [1 ]
Baturin, V. A. [2 ]
Karpenko, O. Yu [2 ]
Lunika, M. M. [2 ]
机构：
[1] NAS, Inst Problems Mat Sci, Kiev, Ukraine
[2] NAS, Inst Appl Phys, Kiev, Ukraine
来源：
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2008年 / 30卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The qualitative textured ZnO films were deposited by radio frequency magnetron. sputtering on Si3N4/Si substrates using method of layer by layer deposition. The influence of substrate temperature, pressures of oxygen and nitrogen on morphology and structure of ZnO films were investigated. The criterions of nitrogen doping of ZnO films during their deposition by radio frequency magnetron sputtering were obtained. The influence of annealing in air on structure of films was explored.
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页码：633 / 643
页数：11
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