Physical modeling of shallow/deep junctions

被引：0
|
作者：
Rafferty, C [1 ]
机构：
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY | 1998年 / 449卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Predicting impurity profiles after diffusion is a key step in process design for deep submicron integrated circuits. Recent technology trends give rise to strong anomalous diffusion effects arising from implantation damage. Present models describe such effects at high energy but require improvement for shallow implants.
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页码：91 / 94
页数：4
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