Multi-Bit per Cell Magnetic Random Access Memory Based on Spin Torque Oscillator

被引：0

作者：

Sbiaa, Rachid ^{[1
]}

机构：

[1] Sultan Qaboos Univ, Phys Dept, POB 36, Muscat 123, Oman

来源：

3RD ELECTRONIC AND GREEN MATERIALS INTERNATIONAL CONFERENCE 2017 (EGM 2017) | 2017年 / 1885卷

关键词：

ROOM-TEMPERATURE; MAGNETORESISTANCE; ANISOTROPY;

D O I：

10.1063/1.5002468

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value f(o). The value of f(o) is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.

引用

页数：6

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