Light absorption enhancement in metal-semiconductor-metal photodetectors using plasmonic nanostructure gratings

被引：2
|
作者：
Das, Narottam [1 ]
Tan, Chee Leong [2 ]
Lysak, Volodymyr V. [3 ]
Alameh, Kamal [1 ,4 ]
Lee, Yong Tak [2 ,3 ,4 ]
机构：
[1] Edith Cowan Univ, Electron Sci Res Inst, 270 Joondalup Dr, Joondalup, WA 6027, Australia
[2] Gwangju Inst Sci & Technol GIST, Sch Photon Sci, Gwangju 500712, South Korea
[3] GIST, Dept Informat & Commun, Gwangju, South Korea
[4] GIST, Dept Nanobio Mat & Elect, Gwangju, South Korea
来源：
2009 6TH INTERNATIONAL SYMPOSIUM ON HIGH CAPACITY OPTICAL NETWORKS AND ENABLING TECHNOLOGIES (HONET 2009) | 2009年
关键词：
Subwavelength gratings; surface plasmon polaritons; plasmonic nanostructures; FDTD simulation; nanophotonics; MSM-PDs; SUBWAVELENGTH HOLE ARRAYS; OPTICAL-TRANSMISSION; FILMS;
D O I：
10.1109/HONET.2009.5423095
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we adopt the finite difference time-domain (FDTD) method to optimize the absorption of a novel metal-semiconductor-metal photodetector (MSM-PD) structure based on the use of a double-layer nanostructured metal grating. The metal fingers of the MSM-PDs are etched with appropriate depths to maximize light absorption through plasmonic effects. Simulation results show 40 times enhancement in 980nm light trapping due to extraordinary optical signal propagation through the nanostructured double-metal grating, in comparison to conventional MSM-PDs.
引用
收藏
页码：86 / +
页数：2
相关论文
共 50 条
  • [41] Absorption Enhancement in a Quantum Dot Thz Detector with a Metal-Semiconductor-Metal Structure
    Liu, Hongmei
    Zhang, Ruolong
    Meng, Tianhua
    Kang, Yongqiang
    Hu, Weidong
    Zhao, Guozhong
    COATINGS, 2022, 12 (07)
  • [42] Plasmonic effect-enhanced Ag nanodisk incorporated ZnO/Si metal-semiconductor-metal photodetectors
    Kumar, Manjeet
    Kojori, Hossein Shokri
    Kim, Sung Jin
    Park, Hyeong-Ho
    Kim, Joondong
    Yun, Ju-Hyung
    JOURNAL OF PHOTONICS FOR ENERGY, 2016, 6 (04):
  • [43] Wavelength selective UV/visible metal-semiconductor-metal photodetectors
    S. V. Averin
    P. I. Kuznetzov
    V. A. Zhitov
    L. Yu. Zakharov
    V. M. Kotov
    N. V. Alkeev
    Optical and Quantum Electronics, 2016, 48
  • [44] PICOSECOND THIN-FILM METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
    PINTOGUEDES, JM
    GUSTAFSON, TK
    SLAYMAN, C
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1980, 70 (06) : 631 - 632
  • [45] Wavelength selective UV/visible metal-semiconductor-metal photodetectors
    Averin, S. V.
    Kuznetzov, P. I.
    Zhitov, V. A.
    Zakharov, L. Yu.
    Kotov, V. M.
    Alkeev, N. V.
    OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (05)
  • [46] GaAs metal-semiconductor-metal photodetectors with recessed cathodes and/or anodes
    Yuang, RH
    Shieh, JL
    Chyi, JI
    Chen, JS
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 415 - 418
  • [47] Theoretical optimization of the characteristics of ZnO metal-semiconductor-metal photodetectors
    Ghania Harzallah
    Mohamed Remram
    ChineseOpticsLetters, 2011, 9 (10) : 5 - 9
  • [48] Simulation of AlGaN and BGaN metal-semiconductor-metal ultraviolet photodetectors
    Hamady, Sidi Ould Saad
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 1099 - 1104
  • [49] Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors
    Tian, Y
    Chua, SJ
    Wang, H
    SOLID-STATE ELECTRONICS, 2003, 47 (10) : 1863 - 1867
  • [50] Dark current suppression in GaAs metal-semiconductor-metal photodetectors
    Wohlmuth, WA
    Fay, P
    Adesida, I
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (08) : 1061 - 1063
12345