Polymorphous Silicon: A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

被引：4

作者：

Templier, Francois ^{[1
]}

Brochet, Julien ^{[1
]}

Aventurier, Bernard ^{[1
]}

Cooper, David ^{[1
]}

Abramov, Alexey ^{[2
]}

Daineka, Dmitri ^{[2
]}

Roca i Cabarrocas, Pere ^{[2
]}

机构：

[1] CEA LETI Minatec, F-38054 Grenoble, France

[2] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2010年 / E93C卷 / 10期

关键词：

thin-film transistors; polymorphous; silicon; OLED;

D O I：

10.1587/transele.E93.C.1490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than pc-Si:H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si:H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-Si:H TFTs. TEM analysis has evidenced for the first time a significant structural difference between pm-Si:H and a-Si:H materials, in the TFT device configuration. Pm-Si:H appears to be very suitable for low cost and high performance AM-OLED fabrication.

引用

页码：1490 / 1494

页数：5

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