Polymorphous Silicon: A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

被引：4
|
作者：
Templier, Francois [1 ]
Brochet, Julien [1 ]
Aventurier, Bernard [1 ]
Cooper, David [1 ]
Abramov, Alexey [2 ]
Daineka, Dmitri [2 ]
Roca i Cabarrocas, Pere [2 ]
机构：
[1] CEA LETI Minatec, F-38054 Grenoble, France
[2] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2010年 / E93C卷 / 10期
关键词：
thin-film transistors; polymorphous; silicon; OLED;
D O I：
10.1587/transele.E93.C.1490
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than pc-Si:H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si:H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-Si:H TFTs. TEM analysis has evidenced for the first time a significant structural difference between pm-Si:H and a-Si:H materials, in the TFT device configuration. Pm-Si:H appears to be very suitable for low cost and high performance AM-OLED fabrication.
引用
收藏
页码：1490 / 1494
页数：5
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