Thickness effect on Schottky diode characteristics of ZnO thin film

被引：0

作者：

Nayak, Jyoti ^{[1
]}

Chen, Yi ^{[1
]}

Kang, Kwang Sun ^{[1
]}

Kim, Jaehwan ^{[1
]}

机构：

[1] Inha Univ, Creat Res Ctr EAPap Actuator, Dept Mech Engn, Inchon 402751, South Korea

来源：

NANOSENSORS, BIOSENSORS, AND INFO-TECH SENSORS AND SYSTEMS 2010 | 2010年 / 7646卷

关键词：

ZnO; Schottky diode; X-ray diffraction; Atomic force microscopy;

D O I：

10.1117/12.847486

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Surface morphologies of the ZnO thin films with various thicknesses have been investigated. ZnO sol was prepared with zinc acetate dihydrate, 2-methoxyethanol, and monoethanolamine. Thicknesses of the ZnO films were controlled by a multiple coating process. The ZnO thin films were annealed at 750 degrees C. The film thickness increased as the coating time increased. From the XRD study, it is observed that the ZnO films exhibit wurtzite structure ( 002) and the diffraction intensity increased as the thickness increased. Effect of thickness on Schottky behavior was evaluated by measuring current-voltage characteristics. The pristine ZnO thin films with thickness of 132 nm exhibited Schottky diode characteristics with high rectification ratio.

引用

页数：5

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