DEPENDENCE OF PTSI SCHOTTKY DIODE ELECTRICAL BEHAVIOR ON THE PLATINUM FILM THICKNESS AND ON THE ANNEALING PROCESS

被引:5
|
作者
LAVIA, F [1 ]
LANZA, P [1 ]
VISCUSO, O [1 ]
FERLA, G [1 ]
RIMINI, E [1 ]
机构
[1] DIPARTIMENTO FIS,CATANIA,ITALY
关键词
D O I
10.1016/0040-6090(88)90231-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:13 / 20
页数:8
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