Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diode

被引：11
|
作者：
Zhu, Meiguang [1 ]
Zhang, Jian [1 ]
Wang, Zhiliang [1 ]
Wan, Lijuan [1 ]
Chen, Xuejiao [1 ]
机构：
[1] E China Normal Univ, Dept Elect Engn, State Key Lab Transducer Technol, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 43卷 / 01期
基金：
中国国家自然科学基金;
关键词：
TEMPERATURE;
D O I：
10.1016/j.physe.2010.09.009
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A comparison study between the PtSi/p-Si/Al and the PtSi/p-SiNWs/p-Si/Al contacts has been carried out in this study. The PtSi/p-Si/Al contact behaves an ohmic contact with about contact resistance 10 Q, but the PtSi/p-SiNWs/p-Si/Al contact exhibits the rectifying properties. The Richardson plot of reverse saturation current over a temperature range of 293-373 K is used to determine the electrical parameters of the PtSi/p-SiNWs/p-Si/Al Schottky barrier diode. And the obtained electrical parameters are also confirmed by the Cheung's model. The barrier height and ideality factor obtained at room temperature are 0.242 eV and 2.426, respectively, indicating a deviation from ideal Schottky diode. The effect of the interfacial layer and the series resistance on the electrical characteristics was investigated for the PtSi/p-SiNWs/p-Si/Al Schottky diode. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：515 / 520
页数：6
相关论文
共 50 条
  • [1] Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode
    Hemdani, Ahmed
    Rahmani, Mehdi
    PHYSICA SCRIPTA, 2024, 99 (08)
  • [2] Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer
    Ayyildiz, E
    Turut, A
    Efeoglu, H
    Tuzemen, S
    Saglam, M
    Yogurtcu, YK
    SOLID-STATE ELECTRONICS, 1996, 39 (01) : 83 - 87
  • [3] Enhanced electrical characteristics of Zr/diamond Schottky barrier diode with cerium hexaboride interfacial layer
    Zhu, Tian-Fei
    Shao, Guoqing
    Min, Tai
    Wang, Hong-Xing
    MATERIALS LETTERS, 2023, 344
  • [4] Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure
    Zhu, Meiguang
    Zhang, Jian
    Hou, Huina
    MICROELECTRONIC ENGINEERING, 2012, 95 : 112 - 115
  • [5] The Effect of Interface States Density Distribution and Series Resistance on Electrical Behaviour of Schottky Diode
    Dhimmar, J. M.
    Desai, H. N.
    Modi, B. P.
    MATERIALS TODAY-PROCEEDINGS, 2016, 3 (06) : 1658 - 1665
  • [6] Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer
    Tugluoglu, N
    Karadeniz, S
    Altindal, S
    APPLIED SURFACE SCIENCE, 2005, 239 (3-4) : 481 - 489
  • [7] EFFECT OF INTERFACIAL LAYER DOPED WITH OPPOSITE TYPE IMPURITIES ON SCHOTTKY DIODE
    PAN, SH
    MO, D
    CHINESE PHYSICS, 1985, 5 (01): : 209 - 215
  • [8] Measurement of I-V characteristics of a PtSi/p-Si Schottky barrier diode at low temperatures
    Gholami, Somayeh
    Khakbaz, Meysam
    World Academy of Science, Engineering and Technology, 2011, 81 : 1006 - 1009
  • [9] Effect of series resistance on the performance of high resistivity silicon Schottky diode
    Keffous, A
    Siad, M
    Mamma, S
    Belkacem, Y
    Chaouch, CL
    Menari, H
    Dahmani, A
    Chergui, W
    APPLIED SURFACE SCIENCE, 2003, 218 (1-4) : 336 - 342
  • [10] Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect
    L. Jerbi
    M. Rahmani
    H. Ajlani
    M. Guendouz
    N. Lorrain
    M. Oueslati
    A. Meftah
    Journal of Inorganic and Organometallic Polymers and Materials, 2023, 33 : 995 - 1004
12345