Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diode

被引：11
|
作者：
Zhu, Meiguang [1 ]
Zhang, Jian [1 ]
Wang, Zhiliang [1 ]
Wan, Lijuan [1 ]
Chen, Xuejiao [1 ]
机构：
[1] E China Normal Univ, Dept Elect Engn, State Key Lab Transducer Technol, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 43卷 / 01期
基金：
中国国家自然科学基金;
关键词：
TEMPERATURE;
D O I：
10.1016/j.physe.2010.09.009
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A comparison study between the PtSi/p-Si/Al and the PtSi/p-SiNWs/p-Si/Al contacts has been carried out in this study. The PtSi/p-Si/Al contact behaves an ohmic contact with about contact resistance 10 Q, but the PtSi/p-SiNWs/p-Si/Al contact exhibits the rectifying properties. The Richardson plot of reverse saturation current over a temperature range of 293-373 K is used to determine the electrical parameters of the PtSi/p-SiNWs/p-Si/Al Schottky barrier diode. And the obtained electrical parameters are also confirmed by the Cheung's model. The barrier height and ideality factor obtained at room temperature are 0.242 eV and 2.426, respectively, indicating a deviation from ideal Schottky diode. The effect of the interfacial layer and the series resistance on the electrical characteristics was investigated for the PtSi/p-SiNWs/p-Si/Al Schottky diode. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：515 / 520
页数：6
相关论文
共 50 条
12345