Optical property modification of PMMA by ion-beam implantation

被引:74
|
作者
Hong, W [1 ]
Woo, HJ [1 ]
Choi, HW [1 ]
Kim, YS [1 ]
Kim, GD [1 ]
机构
[1] Korea Inst Geol Min & Mat, Yusong gu, Taejon 305350, South Korea
关键词
waveguide; ion implantation; PMMA; optical properties; refractive index; index depth profile; light loss;
D O I
10.1016/S0169-4332(00)00698-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Polymeric waveguides were fabricated by proton implantation on poly(methyl methacrylate) (PMMA). Depth profiles of the refractive indices of modified regions were obtained and were found to be in good agreement with the stopping power curve of protons in PMMA. It means that the waveguides are formed at the depths where the stopping power is the maximum value. Light losses for 635 nm wavelength were measured using planar waveguides to verify if the transmittance is enough for the application of the technique to optical devices. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:428 / 432
页数:5
相关论文
共 50 条
  • [31] HYDROGEN AND PHOSPHORUS ION-BEAM EXPOSURE CHARACTERISTICS OF PMMA
    WADA, Y
    MIGITAKA, M
    MOCHIJI, K
    OBAYASHI, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1127 - 1131
  • [32] DRY DEVELOPMENT OF ION-BEAM EXPOSED PMMA RESIST
    ADESIDA, I
    CHINN, JD
    RATHBUN, L
    WOLF, ED
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 666 - 671
  • [33] Optical property modification of ruby and sapphire by N-ion implantation
    Chaiwong, C
    Yu, LD
    Schinarakis, K
    Vilaithong, T
    SURFACE & COATINGS TECHNOLOGY, 2005, 196 (1-3): : 108 - 112
  • [34] STUDIES ON SURFACE MODIFICATION OF METALS BY ION-BEAM MIXING IMPLANTING WITH PLASMA SOURCE ION-IMPLANTATION
    CHEN, YF
    WU, ZF
    SHI, YC
    JIANG, XR
    CHINESE SCIENCE BULLETIN, 1994, 39 (14): : 1161 - 1165
  • [35] FOCUSED ION-BEAM GALLIUM IMPLANTATION INTO SILICON
    TAMURA, M
    SHUKURI, S
    MONIWA, M
    DEFAULT, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (03): : 183 - 190
  • [36] NANOSTRUCTURES PROCESSING BY FOCUSED ION-BEAM IMPLANTATION
    PETROFF, PM
    LI, YJ
    XU, Z
    BEINSTINGL, W
    SASA, S
    ENSSLIN, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3074 - 3078
  • [37] CHANNELED IMPLANTATION WITH A PARALLEL SCANNED ION-BEAM
    WESTENDORP, JFM
    KAIM, RE
    SCHREUTELKAMP, R
    SARIS, FW
    VANDERPOT, JW
    ODLUM, GB
    SOLID STATE TECHNOLOGY, 1988, 31 (10) : 53 - 54
  • [38] LARGE DIAMETER ION-BEAM IMPLANTATION SYSTEM
    MATSUDA, K
    FUKUMARU, F
    MIZUTANI, Y
    KONISHI, M
    MATSUNAGA, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 314 - 316
  • [39] FOCUSED PHOSPHORUS ION-BEAM IMPLANTATION INTO SILICON
    MADOKORO, Y
    SHUKURI, S
    UMEMURA, K
    TAMURA, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 511 - 514
  • [40] ALIGNMENT ACCURACY OF FOCUSED ION-BEAM IMPLANTATION
    MORITA, T
    ARIMOTO, H
    MIYAUCHI, E
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06): : 955 - 958