Design of strain and bandgap profiles of InGaAsP fabricated by selective area metal-organic vapor phase epitaxy for polarization independent operation

被引：1
|
作者：
Shioda, Tomonari [1 ,3 ]
Sugiyama, Masakazu [1 ,3 ]
Nakano, Yoshiaki [2 ,3 ]
机构：
[1] Univ Tokyo, Sch Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[2] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo, Japan
[3] Japan Sci & Technol Agcy, SORST, Tokyo, Japan
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381118
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We designed the strain and bandgap distribution of tensile InGaAs/InGaAsP grown by selective-area MOVPE using vapor-phase diffusion model. A design principle of selective-area growth for integrating polarization independent components is discussed.
引用
收藏
页码：43 / 46
页数：4
相关论文
共 50 条
  • [31] Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy
    Motohisa, Junichi
    Kameda, Hiroki
    Sasaki, Masahiro
    Tomioka, Katsuhiro
    NANOTECHNOLOGY, 2019, 30 (13)
  • [32] Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy
    Hahn, CK
    Motohisa, J
    Fukui, T
    APPLIED PHYSICS LETTERS, 2000, 76 (26) : 3947 - 3949
  • [33] Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy
    Hiruma, K.
    Tomioka, K.
    Mohan, P.
    Yang, L.
    Noborisaka, J.
    Hua, B.
    Hayashida, A.
    Fujisawa, S.
    Hara, S.
    Motohisa, J.
    Fukui, T.
    JOURNAL OF NANOTECHNOLOGY, 2012, 2012
  • [34] Chemical vapor reactions of ZnO growth by metal-organic vapor phase epitaxy
    Maejima, K.
    Fujita, S.
    JOURNAL OF CRYSTAL GROWTH, 2006, 293 (02) : 305 - 310
  • [35] Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
    Shioda, Tomonari
    Sugiyama, Masakazu
    Shimogaki, Yukihiro
    Nakano, Yoshiaki
    APPLIED PHYSICS EXPRESS, 2010, 3 (09)
  • [36] Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy
    Hua, Bin
    Motohisa, Junichi
    Ding, Ying
    Hara, Shinjiroh
    Fukui, Takashi
    APPLIED PHYSICS LETTERS, 2007, 91 (13)
  • [37] Design and Assessment of Metal-Organic Vapor Phase Epitaxy—Grown Dual Waveband Infrared Detectors
    N.T. Gordon
    P. Abbott
    J. Giess
    A. Graham
    J.E. Hails
    D.J. Hall
    L. Hipwood
    C.L. Jones
    C.D. Maxey
    J. Price
    Journal of Electronic Materials, 2007, 36 : 931 - 936
  • [38] TUNABLE TWIN-GUIDE LASERS WITH IMPROVED PERFORMANCE FABRICATED BY METAL-ORGANIC VAPOR-PHASE EPITAXY
    WOLF, T
    ILLEK, S
    RIEGER, J
    BORCHERT, B
    THULKE, W
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (03) : 273 - 275
  • [39] GROWTH MECHANISMS IN THE METAL-ORGANIC VAPOR-PHASE EPITAXY OF INP
    COVA, P
    MASUT, RA
    CURRIE, JF
    JOURNAL DE PHYSIQUE III, 1992, 2 (12): : 2333 - 2347
  • [40] Laser-assisted local metal-organic vapor phase epitaxy
    Trippel, Max
    Blaesing, Juergen
    Wieneke, Matthias
    Dadgar, Armin
    Schmidt, Gordon
    Bertram, Frank
    Christen, Juergen
    Strittmatter, Andre
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2022, 93 (11):
12345