Design of strain and bandgap profiles of InGaAsP fabricated by selective area metal-organic vapor phase epitaxy for polarization independent operation

被引：1
|
作者：
Shioda, Tomonari [1 ,3 ]
Sugiyama, Masakazu [1 ,3 ]
Nakano, Yoshiaki [2 ,3 ]
机构：
[1] Univ Tokyo, Sch Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[2] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo, Japan
[3] Japan Sci & Technol Agcy, SORST, Tokyo, Japan
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381118
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We designed the strain and bandgap distribution of tensile InGaAs/InGaAsP grown by selective-area MOVPE using vapor-phase diffusion model. A design principle of selective-area growth for integrating polarization independent components is discussed.
引用
收藏
页码：43 / 46
页数：4
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