Current Gain Enhancement for Silicon-on-Insulator Lateral Bipolar Junction Transistors Operating at Liquid-Helium Temperature

被引：6

作者：

Chen, Si ^{[1
]}

Luo, Chao ^{[2
]}

Zhang, Yujing ^{[2
]}

Xu, Jun ^{[2
]}

Hu, Qitao ^{[1
]}

Zhang, Zhen ^{[1
]}

Guo, Guoping ^{[2
]}

机构：

[1] Uppsala Univ, Dept Elect Engn, Div Solid State Elect, Angstrom Lab, SE-75121 Uppsala, Sweden

[2] Univ Sci & Technol China, Dept Phys, CAS Key Lab Quantum Informat, Hefei 230026, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 06期

基金：

瑞典研究理事会;

关键词：

Integrated circuits; Tunneling; Cryogenics; Signal to noise ratio; Junctions; Transistors; Cryogenic amplifier; signal-to-noise ratio; lateral bipolar junction transistor; current gain; tunneling;

D O I：

10.1109/LED.2020.2985674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional homojunction bipolar junction transistors (BJTs) are not suitable for cryogenic operation due to heavy doping-induced emitter band-gap narrowing and strong degradation in current gain (beta) at low temperature. In this letter, we show that, on lateral version of the BJTs (LBJTs) fabricated on silicon-on-insulator (SOI) substrate, such beta degradation can be mitigated by applying a substrate bias (V-sub), and a beta over unity is achieved in a base current (I-B) range over 5 orders ofmagnitudes at 4.2 K, with a peak beta similar to 100 demonstrated. The beta improvement is explained by the enhanced electron tunneling through base region as a result of base barrier lowering and thinning by a positive V-sub, which leads to dramatic increase of collector current (I-C) while I-B is negligibly affected.

引用

页码：800 / 803

页数：4

共 26 条

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