Improvement in crystallinity of ZnO films prepared by rf magnetron sputtering with grid electrode

被引：16

作者：

Yasui, K ^{[1
]}

Phuong, NV ^{[1
]}

Kuroki, Y ^{[1
]}

Takata, M ^{[1
]}

Akahane, T ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Elect & Informat Engn, Nagaoka, Niigata 9402188, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1B期

关键词：

zinc oxide; magnetron sputtering; grid electrode; negative bias; crystallinity;

D O I：

10.1143/JJAP.44.684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO films were prepared on Si and quartz substrates by rf magnetron sputtering with a mesh grid electrode. The influence of a negative grid bias on the crystallinity and optical property of ZnO films was investigated. At an appropriate dc grid bias, ZnO films with good crystallinity were grown from room temperature to 300 degrees C. The number of stacking faults, which were observed in the X-ray diffraction spectra of the films deposited without the grid electrode, decreased in the films deposited with the grid electrode. All ZnO films showed a high transmittance in the visible region.

引用

页码：684 / 687

页数：4

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