Doped Mott insulators are insulators: Hole localization in the cuprates

被引:30
|
作者
Choy, TP [1 ]
Phillips, P [1 ]
机构
[1] Univ Illinois, Loomis Lab Phys, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.95.196405
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of states at zero temperature. The energy scale for the pseudogap is set by the nearest-neighbor singlet-triplet splitting. As this energy scale vanishes if transitions, virtual or otherwise, to the upper Hubbard band are not permitted, the fundamental length scale in the pseudogap regime is the average distance between doubly occupied sites. Consequently, the pseudogap is tied to the noncommutativity of the two limits U ->infinity (U the on-site Coulomb repulsion) and L ->infinity (the system size).
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页数:4
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