Doped Mott insulators are insulators: Hole localization in the cuprates

被引:30
|
作者
Choy, TP [1 ]
Phillips, P [1 ]
机构
[1] Univ Illinois, Loomis Lab Phys, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.95.196405
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of states at zero temperature. The energy scale for the pseudogap is set by the nearest-neighbor singlet-triplet splitting. As this energy scale vanishes if transitions, virtual or otherwise, to the upper Hubbard band are not permitted, the fundamental length scale in the pseudogap regime is the average distance between doubly occupied sites. Consequently, the pseudogap is tied to the noncommutativity of the two limits U ->infinity (U the on-site Coulomb repulsion) and L ->infinity (the system size).
引用
下载
收藏
页数:4
相关论文
共 50 条
  • [41] Electronic charge reconstruction of doped Mott insulators in multilayered nanostructures
    Chen, Ling
    Freericks, J. K.
    PHYSICAL REVIEW B, 2007, 75 (12)
  • [42] Colloquium: Identifying the propagating charge modes in doped Mott insulators
    Phillips, Philip
    REVIEWS OF MODERN PHYSICS, 2010, 82 (02) : 1719 - 1742
  • [43] Universality of pseudogap and emergent order in lightly doped Mott insulators
    Battisti I.
    Bastiaans K.M.
    Fedoseev V.
    De La Torre A.
    Iliopoulos N.
    Tamai A.
    Hunter E.C.
    Perry R.S.
    Zaanen J.
    Baumberger F.
    Allan M.P.
    Allan, M.P. (allan@physics.leidenuniv.nl), 1600, Nature Publishing Group (13): : 21 - 25
  • [44] Spin and charge ordering in self-doped Mott insulators
    Mizokawa, T
    Khomskii, DI
    Sawatzky, GA
    PHYSICAL REVIEW B, 2000, 61 (17): : 11263 - 11266
  • [45] Influence of a flat dispersion on the superconducting instability in doped Mott insulators
    Kohno, M
    Imada, M
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2001, 62 (1-2) : 225 - 229
  • [46] Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface
    Ming, Fangfei
    Smith, Tyler S.
    Johnston, Steven
    Snijders, Paul C.
    Weitering, Hanno H.
    PHYSICAL REVIEW B, 2018, 97 (07)
  • [47] Doped Mott insulators in the triangular-lattice Hubbard model
    Zhu, Zheng
    Sheng, D. N.
    Vishwanath, Ashvin
    PHYSICAL REVIEW B, 2022, 105 (20)
  • [48] The electronic states of two oppositely doped Mott insulators bilayers
    Ribeiro, T. C.
    Seidel, A.
    Han, J. H.
    Lee, D. -H.
    EUROPHYSICS LETTERS, 2006, 76 (05): : 891 - 897
  • [49] ARE HIGH-T-C SUPERCONDUCTERS DOPED MOTT INSULATORS
    CYROT, M
    NATURE, 1987, 330 (6144) : 115 - 115
  • [50] Coherent versus incoherent transport in layered doped Mott insulators
    Lee, HC
    Wiegmann, PB
    PHYSICAL REVIEW B, 1996, 53 (17): : 11817 - 11824