Charge dynamics in doped Mott insulators

被引：1
|
作者：
Kohno, M [1 ]
Hu, X [1 ]
Tachiki, M [1 ]
机构：
[1] Natl Inst Mat Sci, Computat Mat Sci Ctr, Tsukuba, Ibaraki 3050047, Japan
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2004年 / 412卷
关键词：
overscreening; Hubbard model; charge susceptibility; phonon softening;
D O I：
10.1016/j.physc.2003.11.077
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Charge dynamics in the two-dimensional Hubbard model is investigated by quantum Monte Carlo simulations. We find that dielectric function epsilon(q, omega) becomes negative at finite frequencies for U/t = 4 with hole density delta = 0.15. Numerical results indicate that vertex corrections enhance charge fluctuations and that this enhancement is important for overscreening. Based on the numerical results, we briefly discuss phonon softening which is observed by X-ray and neutron inelastic scattering experiments. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：82 / 85
页数：4
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