Optical phonon lifetimes in sputtered AlN thin films

被引：14
|
作者：
Pobedinskas, P. [1 ]
Ruttens, B. [1 ,2 ]
D'Haen, J. [1 ,2 ]
Haenen, K. [1 ,2 ]
机构：
[1] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium
[2] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 19期
关键词：
ALUMINUM NITRIDE; STRESS; GAN; ELLIPSOMETRY; TENSILE; CARRIER;
D O I：
10.1063/1.4711773
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the vibrational properties of AlN thin films deposited on silicon (100) substrates by the reactive DC-pulsed magnetron sputtering. The frequencies and lifetimes of the E-1(TO) and A(1)(LO) optical phonons are calculated from Fourier transform infrared spectra using the factorized model of a damped oscillator. We analyze the structural properties by the x-ray diffraction technique to correlate the elongation of phonon lifetimes with increasing film thickness. The lifetimes of the phonon modes in AlN thin films are compared to the values in a single crystal. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711773]
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页数：4
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