Numerical Simulations of Novel InGaN Solar Cells

被引：0
|
作者：
Brown, G. F. [1 ,2 ]
Ager, J. W., III [2 ]
Walukiewicz, W. [2 ]
Wu, J. [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA
来源：
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年
基金：
美国国家科学基金会;
关键词：
BAND-GAP; INN;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Finite element simulations of novel InGaN solar cells, requiring no p-type InGaN, were carried out using the commercial software package APSYS. Simulations show that efficient, compositionally graded p-GaN/nInsGal-.N solar cells can be achieved, provided the graded layer is confined within the depletion region. These compositionally graded solar cells can be used as the top cell in an InGaN/Si double-junction cell to achieve AM 1.5 efficiencies over 27% using realistic material parameters.
引用
收藏
页码：1092 / +
页数：2
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