Efficiency enhancement of InGaN/GaN solar cells with nanostructures

被引：28
|
作者：
Bai, J. [1 ]
Yang, C. C. [1 ]
Athanasiou, M. [1 ]
Wang, T. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
22;
D O I：
10.1063/1.4864640
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520 nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9 V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%. (C) 2014 AIP Publishing LLC.
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页数：4
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