Efficiency Improvement of the Structure InGaN/GaN for Solar Cells Applications

被引：0
|
作者：
Aissat, Abdelkader [1 ]
Bestam, Rachid [1 ]
Arbouz, Hayet [1 ]
Vilcot, Jean Perre [2 ]
机构：
[1] Univ Blida 1, LATSI Lab Fac Technol, BP270, Blida 09000, Algeria
[2] Univ Sci & Technol Lille1, Inst Elect Microelect & Nanotechnol, UMR 8520, CNRS, F-59652 Villeneuve Dascq 1, France
来源：
PROCEEDINGS OF 2015 3RD IEEE INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC'15) | 2015年
关键词：
Materials; semiconductor III-V; solar cell; optoelectronics;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this work, we were interested about the study of modeling and simulation of a structure based on In1-xGaxN/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In0.35Ga0.65N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.
引用
收藏
页码：1028 / 1031
页数：4
相关论文
共 50 条
  • [1] The effect of dislocations on the efficiency of InGaN/GaN solar cells
    Zhang, Y.
    Kappers, M. J.
    Zhu, D.
    Oehler, F.
    Gao, F.
    Humphreys, C. J.
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 117 : 279 - 284
  • [2] Efficiency enhancement of InGaN/GaN solar cells with nanostructures
    Bai, J.
    Yang, C. C.
    Athanasiou, M.
    Wang, T.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (05)
  • [3] Efficiency optimization of the structure pin-InGaN/GaN and quantum well-InGaN for solar cells
    Aissat, A.
    Arbouz, H.
    Nacer, S.
    Benyettou, F.
    Vilcot, J. P.
    [J]. INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2016, 41 (45) : 20867 - 20873
  • [4] Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration
    Z. W. Zheng
    M. H. Lai
    L. Y. Ying
    B. P. Zhang
    [J]. Applied Physics A, 2016, 122
  • [5] Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration
    Zheng, Z. W.
    Lai, M. H.
    Ying, L. Y.
    Zhang, B. P.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (10):
  • [6] High internal and external quantum efficiency InGaN/GaN solar cells
    Matioli, Elison
    Neufeld, Carl
    Iza, Michael
    Cruz, Samantha C.
    Al-Heji, Ali A.
    Chen, Xu
    Farrell, Robert M.
    Keller, Stacia
    DenBaars, Steven
    Mishra, Umesh
    Nakamura, Shuji
    Speck, James
    Weisbuch, Claude
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (02)
  • [7] InGaN-based solar cells with a tapered GaN structure
    Lin, Chia-Feng
    Chen, Kuei-Ting
    Chen, Sih-Han
    Yang, Chung-Chieh
    Huang, Wan-Chun
    Hsieh, Tsung-Han
    [J]. JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 97 - 100
  • [8] Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells
    Horng, Ray-Hua
    Lin, Shih-Ting
    Tsai, Yu-Li
    Chu, Mu-Tao
    Liao, Wen-Yih
    Wu, Ming-Hsien
    Lin, Ray-Ming
    Lu, Yuan-Chieh
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (07) : 724 - 726
  • [9] Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates
    Inoue, S.
    Katoh, M.
    Kobayashi, A.
    Ohta, J.
    Fujioka, H.
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (3-4): : 88 - 90
  • [10] Degradation in Efficiency of InGaN/GaN Multiquantum Well Solar Cells With Rising Temperature
    Shan, Hengsheng
    Mei, Yun-Jian
    Wang, Ning
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (11) : 6195 - 6200
12345