Efficiency Improvement of the Structure InGaN/GaN for Solar Cells Applications

被引：0

作者：

Aissat, Abdelkader ^{[1
]}

Bestam, Rachid ^{[1
]}

Arbouz, Hayet ^{[1
]}

Vilcot, Jean Perre ^{[2
]}

机构：

[1] Univ Blida 1, LATSI Lab Fac Technol, BP270, Blida 09000, Algeria

[2] Univ Sci & Technol Lille1, Inst Elect Microelect & Nanotechnol, UMR 8520, CNRS, F-59652 Villeneuve Dascq 1, France

来源：

PROCEEDINGS OF 2015 3RD IEEE INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC'15) | 2015年

关键词：

Materials; semiconductor III-V; solar cell; optoelectronics;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we were interested about the study of modeling and simulation of a structure based on In1-xGaxN/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In0.35Ga0.65N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.

引用

页码：1028 / 1031

页数：4

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