Design, Fabrication, and Characterization of Dense Compressible Microinterconnects

被引：15

作者：

Jo, Paul K. ^{[1
]}

Zia, Muneeb ^{[1
]}

Gonzalez, Joe L. ^{[1
]}

Oh, Hanju ^{[1
]}

Bakir, Muhannad S. ^{[2
]}

机构：

[1] Georgia Inst Technol, Elect & Comp Engn Dept, Atlanta, GA 30332 USA

[2] Georgia Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2017年 / 7卷 / 07期

关键词：

3-D IC; interconnect; microelectromechanical system (MEMS); microspring; multichips; packaging; probe tip; temporary interconnection; MECHANICALLY FLEXIBLE INTERCONNECTS; INTEGRATION; SEA;

D O I：

10.1109/TCPMT.2017.2688281

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents gold passivated NiW compressible microinterconnects (CMIs) with 75 mu m height and 150 mu m in-line pitch. The CMIs are batch fabricated using CMOS-compatible processes. The fabricated CMIs have a measured compliance of up to 13.12 mm/N and demonstrate 45 mu m elastic vertical range of motion. Moreover, the CMIs are shown to return to their original geometrical profile after several deflections and consequently are able to maintain contact with their corresponding pads at all times. The measured four-point resistance of a CMI, which includes contact resistance, is as low as 176.3 m Omega.

引用

页码：1003 / 1010

页数：8

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