Investigation of the SiC/(SiC)1-x(AlN)x heterostructures by the method of capacitance-voltage characteristics

被引：1
|
作者：
Kurbanov, MK [1 ]
Bilalov, BA [1 ]
Nurmagomedov, SA [1 ]
Safaraliev, GK [1 ]
机构：
[1] Dagestan State Univ, Makhachkala 327025, Dagestan, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 02期
关键词：
Magnetic Material; Basic Property; Electromagnetism; Sublimation Epitaxy; Abrupt Heterojunctions;
D O I：
10.1134/1.1349934
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Using the method of measuring and analyzing the capacitance-voltage characteristics, it is found that the n-6H-SiC/p-(SiC)(1-x)(AlN)(x) heterostructures obtained by sublimation epitaxy of the (SiC)(1-x)(AlN)(x) layers on the 6H-SiC substrates have abrupt heterojunctions similar to 10(-4) cm thick. The basic properties of heterostructures, which depend on the epilayer composition and temperature, were determined from the capacitance-voltage characteristics. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：209 / 211
页数：3
相关论文
共 50 条
  • [1] Investigation of the SiC/(SiC)1−x(AlN)x heterostructures by the method of capacitance-voltage characteristics
    M. K. Kurbanov
    B. A. Bilalov
    Sh. A. Nurmagomedov
    G. K. Safaraliev
    Semiconductors, 2001, 35 : 209 - 211
  • [2] Investigation of optical properties of SiC/(SiC)1-x(AlN)x heterostructures
    Safaraliev, Gadjimet
    Bilalov, Bilal
    Dallaeva, Dinara
    Ramazanov, Shihgasan
    Geraev, Kamal
    Tomanek, Pavel
    PHOTONICS, DEVICES, AND SYSTEMS V, 2011, 8306
  • [3] Electric properties of (SiC) 1-x(AlN) x/SiC anisotropic heterostructures
    Bilalov B.A.
    Kurbanov M.K.
    Gadzhiev A.A.
    Ramazanov Sh.M.
    Russian Microelectronics, 2011, 40 (8) : 612 - 615
  • [4] PHOTOLUMINESCENCE OF A (SIC)1-X(ALN)X-SIC HETEROJUNCTION
    EMIROV, YN
    SAFARALIEV, GK
    ASHURBEKOV, SA
    KURBANOV, MK
    SEMICONDUCTORS, 1994, 28 (11) : 1098 - 1099
  • [5] Ground-State Structure of Quaternary Alloys (SiC)1-x (AlN)x and (SiC)1-x (GaN)x
    Menad, Abdelkader
    Ferhat, Mohamed
    Zaoui, Ali
    MICROMACHINES, 2023, 14 (02)
  • [6] Interface properties of an AlN/(AlN)x(SiC)1-x/4H-SiC heterostructure
    Edgar, J. H.
    Gu, Z.
    Gu, L.
    Smith, David J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (15): : 3720 - 3725
  • [7] Cathodoluminescence of the solid solutions (SiC)(1-x)(AlN)(x)
    Safaraliev, GK
    Tairov, YM
    Ofitserova, NV
    Morozenko, YV
    Abilova, NA
    SEMICONDUCTORS, 1996, 30 (03) : 272 - 273
  • [8] The influence of the implantation sequence on the (SiC)1-x(AlN)x formation
    Pezoldt, J
    Rybin, PV
    Kulikov, DV
    Trushin, YV
    Yankov, RA
    Voelskow, M
    Kreissig, U
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 166 (166): : 758 - 763
  • [9] Raman spectroscopy investigation of (SiC)(1-x)(AlN)(x) layers formed by ion implantation in 6H-SiC
    Zahn, DRT
    Werninghaus, T
    Thumer, M
    Pezoldt, J
    Heera, V
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 729 - 734
  • [10] Ion beam synthesis:: A novel method of producing (SIC)1-x(AlN)x layers
    Yankov, RA
    Fukarek, W
    Voelskow, M
    Pezoldt, J
    Skorupa, W
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 753 - 756
12345