Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure

被引：9

作者：

Jiang, Bo ^{[1
]}

Tang, Minghua ^{[1
]}

Li, Jiancheng ^{[2
]}

Xiao, Yongguang ^{[1
]}

Tang, Zhenhua ^{[1
]}

Cai, Haiquan ^{[1
]}

Lv, Xiaosong ^{[1
]}

Zhou, Yichun ^{[1
]}

机构：

[1] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China

[2] Natl Univ Def Technol, Sch Elect Sci & Engn, ASIC R&D Ctr, Changsha 410073, Hunan, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 02期

基金：

中国国家自然科学基金;

关键词：

ELECTRICAL-PROPERTIES; THIN-FILMS;

D O I：

10.1088/0022-3727/45/2/025102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi4-xCexTi3O12 (x = 0.0, 0.4, 0.6 and 1.0) ferroelectric-thin films were fabricated by chemical solution deposition. Among these thin film samples, Bi3.4Ce0.6Ti3O12 (BCT) exhibits the best ferroelectric property. An n-channel metal-ferroelectric-insulator-silicon (MFIS) ferroelectric-gate field-effect transistor (FeFET) with Pt/BCT/CeO2/Si structure was fabricated and characterized. Due to the relatively good interface properties between the insulator layer (CeO2) and ferroelectric-gate layer (BCT), the device shows a nearly unchanged memory window of about 3.2V after a 24 h retention test and a field-effect mobility of approximately 24.6 cm(2) V-1 s(-1). These results suggest that the Pt/BCT/CeO2/Si FeFET is suitable for high-performance ferroelectric memory application.

引用

页数：5

共 25 条

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[7] Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure
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[9] Electrical Properties of Au/(Bi,La)4Ti3O12/Pt/SrTa2O6/Si Field-Effect Transistor
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