Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure

被引：9

作者：

Jiang, Bo ^{[1
]}

Tang, Minghua ^{[1
]}

Li, Jiancheng ^{[2
]}

Xiao, Yongguang ^{[1
]}

Tang, Zhenhua ^{[1
]}

Cai, Haiquan ^{[1
]}

Lv, Xiaosong ^{[1
]}

Zhou, Yichun ^{[1
]}

机构：

[1] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China

[2] Natl Univ Def Technol, Sch Elect Sci & Engn, ASIC R&D Ctr, Changsha 410073, Hunan, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 02期

基金：

中国国家自然科学基金;

关键词：

ELECTRICAL-PROPERTIES; THIN-FILMS;

D O I：

10.1088/0022-3727/45/2/025102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi4-xCexTi3O12 (x = 0.0, 0.4, 0.6 and 1.0) ferroelectric-thin films were fabricated by chemical solution deposition. Among these thin film samples, Bi3.4Ce0.6Ti3O12 (BCT) exhibits the best ferroelectric property. An n-channel metal-ferroelectric-insulator-silicon (MFIS) ferroelectric-gate field-effect transistor (FeFET) with Pt/BCT/CeO2/Si structure was fabricated and characterized. Due to the relatively good interface properties between the insulator layer (CeO2) and ferroelectric-gate layer (BCT), the device shows a nearly unchanged memory window of about 3.2V after a 24 h retention test and a field-effect mobility of approximately 24.6 cm(2) V-1 s(-1). These results suggest that the Pt/BCT/CeO2/Si FeFET is suitable for high-performance ferroelectric memory application.

引用

页数：5

共 25 条

[21] Epitaxial growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 thin films on Si and its application to metal-ferroelectric-insulator-semiconductor diodes
Migita, Shinji
Xiong, Si-Bei
Sakamaki, Kazuo
Ota, Hiroyuki
Tarui, Yasuo
Sakai, Shigeki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (9 B): : 5505 - 5511
[22] Epitaxial growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 thin films on Si and its application to metal-ferroelectric-insulator-semiconductor diodes
Migita, S
Xiong, SB
Sakamaki, K
Ota, H
Tarui, Y
Sakai, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (9B): : 5505 - 5511
[23] Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si device with large memory window and metal-ferroelectric-metal-insulator-Si field-effect transistor
Takahashi, Ichirou
Azumi, Keita
Hirayama, Masaki
Teramoto, Akinobu
Sugawa, Shigetoshi
Ohmi, Tadahiro
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9B): : 7336 - 7340
[24] Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors
Kim, Kyoung-Tae
Kim, Gwan-Ha
Woo, Jong-Chang
Kim, Chang-Ii
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (05): : 1178 - 1181
[25] Difference in electrical properties of Bi3.25La0.75Ti3O12-incorporated ferroelectric field-effect transistors with thermally oxidized SiO2 layers prepared on n-type and p-type Si substrates
Pak, J
Ko, E
Nam, K
Park, G
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 46 (01) : 354 - 357

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