LPE growth of Hg1-xCdxTe heterostructures from Te-rich solutions

被引：0
|
作者：
Kubiak, L [1 ]
Adamiec, K [1 ]
Madejczyk, P [1 ]
Wenus, J [1 ]
Martyniuk, P [1 ]
Rutkowski, J [1 ]
机构：
[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland
来源：
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 2001年 / 4413卷
关键词：
liquid phase epitaxy; tipping system; HgCdTe heterostructures;
D O I：
10.1117/12.425410
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The successful fabrication of long wavelength Hg1-yCdyTe/Hg1-xCdxTe heterostructures (y > x) on semi-insulating (111)CdZnTe substrates is presented The heterostructures consist of a thin 2-5-mum layer on n-type 10-15-mum thick HgCdTe epilayer. A novel tipping boat for liquid phase epitaxial growth of mercury cadmium telluride from Te-rich solutions has been proposed. The characterization of double-layer heterostructures was carried out using different methods: microscopic examinations, infrared microscopic transmission, and scanning electron microscopic measurements. Electrical properties were measured in temperature range of 77-300 K using the Van der Pauw arrangement. By optimizing the growth parameters and the construction of graphite boat it was possible to obtain high quality, relatively abrupt Hg1-xCdxTe heterostructures.
引用
收藏
页码：96 / 101
页数：6
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