Growth and characterization of Hg1-xCdxTe epilayers from Hg-rich solution using LPE

被引：0

作者：

Kumar, S ^{[1
]}

Nagpal, A ^{[1
]}

Sharma, S ^{[1
]}

Chavada, FR ^{[1
]}

Gupta, SC ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hg1-xCdxTe (x = 0.22 to 0.24) epilayers are being routinely grown by liquid phase epitaxy from Hg-rich solution using dipping technique at SSPL. These epilayers are grown on lattice-matched CdZnTe substrates and then characterized for their optical and electrical properties. In this paper, we report the influence of experimental parameters like the rotational and the translational speeds at the time of withdrawal of the substrate after growth, on the wiping of the melt from the epilayer surface. Post growth stickings on the epilayer depend mainly on the rate of withdrawal of the substrate holder from the melt. By adjusting the rotational and translational speeds, it has been possible to obtain stick-free and mirror finish surface of the epilayers.

引用

页码：1108 / 1110

页数：3

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