LOW-TEMPERATURE LPE OF HG1-XCDXTE FROM TE-RICH SOLUTION AND ITS EFFECTS

被引：6
|
作者：
CHIANG, CD
WU, TB
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 02期
关键词：
D O I：
10.1016/0022-0248(89)90027-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：499 / 506
页数：8
相关论文
共 50 条
  • [1] LPE growth of Hg1-xCdxTe heterostructures from Te-rich solutions
    Kubiak, L
    Adamiec, K
    Madejczyk, P
    Wenus, J
    Martyniuk, P
    Rutkowski, J
    [J]. INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 2001, 4413 : 96 - 101
  • [2] SUPERCOOLING STUDIES AND LPE GROWTH OF HG1-XCDXTE FROM TE-RICH SOLUTIONS
    WAN, CF
    WEIRAUCH, DF
    KORENSTEIN, R
    BYLANDER, EG
    CASTRO, CA
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (03) : 151 - 157
  • [3] TE-RICH LIQUID-PHASE EPITAXY OF HG1-XCDXTE
    PELLICIARI, B
    [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1994, 29 (1-4): : 1 - 39
  • [4] Growth and characterization of Hg1-xCdxTe epilayers from Hg-rich solution using LPE
    Kumar, S
    Nagpal, A
    Sharma, S
    Chavada, FR
    Gupta, SC
    [J]. PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 1108 - 1110
  • [5] LOW-TEMPERATURE EPITAXY OF HG1-XCDXTE
    CODY, NW
    SUDARSAN, U
    SOLANKI, R
    [J]. LASER- AND PARTICLE-BEAM CHEMICAL PROCESSES ON SURFACES, 1989, 129 : 233 - 238
  • [6] CALCULATION OF DIFFUSION-LIMITED GROWTH OF HG1-XCDXTE EPILAYERS ON CDTE FROM TE-RICH MELTS BY STEP-COOLING LPE
    TEUBNER, T
    WINKLER, M
    BOECK, T
    PARTHIER, L
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1991, 26 (01) : 25 - 34
  • [7] Key issues in substrate and liquid phase epitaxy of Hg1-xCdxTe from Hg-rich and Te-rich solutions
    Gupta, SC
    [J]. FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1999, 3890 : 428 - 435
  • [8] Growth and characterisation of Hg1-xCdxTe (0.21<x<0.36) epilayers grown from Te-rich solution by the dipping technique
    Gupta, SC
    Sitharaman, S
    Nagpal, A
    Gautam, M
    Berlouis, LEA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 165 (1-2) : 19 - 24
  • [9] NATIVE POINT-DEFECTS IN TE-RICH P-TYPE HG1-XCDXTE
    WIENECKE, M
    SCHENK, M
    BERGER, H
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 299 - 302
  • [10] LPE GROWTH OF HG0.60CD0.40TE FROM TE-RICH SOLUTION
    SCHMIT, JL
    BOWERS, JE
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 457 - 458
12345