Buried channel MOSFET DC SPICE modeling using surface channel models

被引：0

作者：

Kulas, M ^{[1
]}

Nathan, A ^{[1
]}

Weale, G ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

UNIVERSITY AND INDUSTRY - PARTNERS IN SUCCESS, CONFERENCE PROCEEDINGS VOLS 1-2 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we review the various methods available for modeling DC behaviour of buried channel metal oxide semiconductor transistors in SPICE. A surface channel model is used to predict the buried channel device DC behaviour, and an equivalent circuit using the fitted surface channel model is presented.

引用

页码：445 / 448

页数：4

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