Lateral punch-through TVS devices for on-chip protection in low-voltage applications

被引：7

作者：

Urresti, J ^{[1
]}

Hidalgo, S ^{[1
]}

Flores, D ^{[1
]}

Roig, J ^{[1
]}

Cortés, I ^{[1
]}

Rebollo, J ^{[1
]}

机构：

[1] CSIC, Ctr Nacl Microelect, IMB, Barcelona 08193, Spain

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 7-8期

关键词：

D O I：

10.1016/j.microrel.2004.10.023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel lateral punch-through TVs (Transient Voltage Suppressor) structure addressed to on-chip protection in very low voltage applications is reported in this paper. Different lateral TVs structures have been studied in order to optimize the electrical performances related with the surge protection capability. Lateral TVs structures with a four-layer doping profile exhibit the best electrical performances, as in the case of vertical TVs devices. The dependence of the basic electrical characteristics on the technological and geometrical parameters is also analysed. Finally, the electrical performances of lateral TVs structures are compared with those of vertical punch-through TVs devices and conventional Zener diodes, being the leakage current level reduced two orders of magnitude in the case of the lateral architecture. Lateral TVs structures exhibits similar performance than vertical counterparts with the advantage of easiest on-chip integration. (c) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1181 / 1186

页数：6

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