Monochromatic soft X-ray-induced reactions of CCl2F2 adsorbed on Si(111)-7x7 near the Si(2p) edge

被引:2
|
作者
Wang, S. -K. [1 ]
Tsai, W. -C. [1 ]
Chou, L. -C. [1 ]
Chen, J. [1 ]
Wu, Y. -H. [1 ]
He, T. -M. [1 ]
Feng, K. -S. [1 ]
Wen, C. -R. [1 ]
机构
[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Dept Phys, Tainan 70101, Taiwan
关键词
Soft X-ray photoelectron spectroscopy; Photon-stimulated desorption; Surface photochemistry; Silicon; Dichlorodifluoromethane; PHOTON-STIMULATED DESORPTION; NEGATIVE-ION FORMATION; DISSOCIATIVE ELECTRON-ATTACHMENT; DIFFERENT PHASE CONDITIONS; SMALL ORGANIC-MOLECULES; SYNCHROTRON-RADIATION; SI(111)(7X7) SURFACE; PHYSISORBED SIF4; FREON MOLECULES; CF2CL2;
D O I
10.1016/j.susc.2012.03.001
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Continuous-time photoelectron spectroscopy (PES) and continuous-time core-level photon-stimulated desorption (PSD) spectroscopy were used to study the monochromatic soft X-ray-induced reactions of CCl2F2 molecules adsorbed on Si(111)-7 x 7 at 30 K (CCl2F2 dose = 2.0 x 10(14)molecules/cm(2), similar to 0.75 monolayer) near the Si(2p) core level. Evolution of adsorbed CCl2F2 molecules was monitored by using continuous-time photoelectron spectroscopy at two photon energies of 98 and 120 eV to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are _1.4 x 10(-18) and similar to 8.0 x 10(-18) cm(2), respectively. Sequential F+ PSD spectra obtained by using continuous-time core-level photon-stimulated desorption spectroscopy in the photon energy range of 98-110 eV show the variation of their shapes with photon exposure and depict the formation of surface SiF species. The dissociation of CCl2F2 molecules adsorbed on 51(111)-7 x 7, irradiated by monochromatic soft X-ray in the photon energy range of 98-110 eV, is mainly due to dissociative electron attachment and indirect dipolar dissociation induced by photoelectrons emitted from the silicon surface. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:1062 / 1070
页数:9
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