Monochromatic soft X-ray-induced reactions of CCl2F2 adsorbed on Si(111)-7x7 near the Si(2p) edge

被引：2

作者：

Wang, S. -K. ^{[1
]}

Tsai, W. -C. ^{[1
]}

Chou, L. -C. ^{[1
]}

Chen, J. ^{[1
]}

Wu, Y. -H. ^{[1
]}

He, T. -M. ^{[1
]}

Feng, K. -S. ^{[1
]}

Wen, C. -R. ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Dept Phys, Tainan 70101, Taiwan

来源：

SURFACE SCIENCE | 2012年 / 606卷 / 13-14期

关键词：

Soft X-ray photoelectron spectroscopy; Photon-stimulated desorption; Surface photochemistry; Silicon; Dichlorodifluoromethane; PHOTON-STIMULATED DESORPTION; NEGATIVE-ION FORMATION; DISSOCIATIVE ELECTRON-ATTACHMENT; DIFFERENT PHASE CONDITIONS; SMALL ORGANIC-MOLECULES; SYNCHROTRON-RADIATION; SI(111)(7X7) SURFACE; PHYSISORBED SIF4; FREON MOLECULES; CF2CL2;

D O I：

10.1016/j.susc.2012.03.001

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Continuous-time photoelectron spectroscopy (PES) and continuous-time core-level photon-stimulated desorption (PSD) spectroscopy were used to study the monochromatic soft X-ray-induced reactions of CCl2F2 molecules adsorbed on Si(111)-7 x 7 at 30 K (CCl2F2 dose = 2.0 x 10(14)molecules/cm(2), similar to 0.75 monolayer) near the Si(2p) core level. Evolution of adsorbed CCl2F2 molecules was monitored by using continuous-time photoelectron spectroscopy at two photon energies of 98 and 120 eV to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are _1.4 x 10(-18) and similar to 8.0 x 10(-18) cm(2), respectively. Sequential F+ PSD spectra obtained by using continuous-time core-level photon-stimulated desorption spectroscopy in the photon energy range of 98-110 eV show the variation of their shapes with photon exposure and depict the formation of surface SiF species. The dissociation of CCl2F2 molecules adsorbed on 51(111)-7 x 7, irradiated by monochromatic soft X-ray in the photon energy range of 98-110 eV, is mainly due to dissociative electron attachment and indirect dipolar dissociation induced by photoelectrons emitted from the silicon surface. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1062 / 1070

页数：9

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