GaN HEMT Compact Model for Circuit Simulation

被引：0

作者：

Syamal, Binit ^{[1
]}

Ben Chiah, Siau ^{[1
]}

Zhou, Xing ^{[1
]}

Ajaykumar, Arjun ^{[1
]}

Anand, M. J. ^{[1
]}

Ng, Geok Ing ^{[1
]}

Arulkumaran, S. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore

[2] Nanyang Technol Univ, Temasek Labs NTU, Singapore, Singapore

来源：

PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年

关键词：

Buffer doping; compact modeling; GaN HEMTs; surface potential; Xsim;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface potential based scalable compact model for GaN high electron-mobility transistors (HEMTs) is presented in this work. Based on the unified regional surface potential approach (URSP) which considers subthreshold, moderate- and strong-inversion regions, we have modeled the variation of Fermi level (E-f) with respect to gate voltage (V-g). GaN buffer doping has been considered for obtaining the subthreshold regional solution using classical charge-voltage equation. The moderate- and strong-inversion models are derived from the coupled Poisson-Schrodinger solutions. Model scalability is presented by incorporating short channel effects (SCEs) and is validated with TCAD as well as measurement data with good match.

引用

页码：535 / 538

页数：4

共 50 条

[41] An efficient parameter extraction method for GaN HEMT small-signal equivalent circuit model
Wen, Zhang
Xu, Yuehang
Wang, Changsi
Zhao, Xiaodong
Xu, Ruimin
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2017, 30 (01)
[42] Compact modelling of InAlN/GaN HEMT for low noise applications
Sakalas, P.
Simukovic, A.
Piotrowicz, S.
Jardel, O.
Delage, S. L.
Mukherjee, A.
Matulionis, A.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (09)
[43] Complete Electromagnetic Simulation of HEMT Switch Circuit
Zhu, Yu
Wei, Cejun
Nohra, George
Zhang, Cindy
Klimashov, Oleksiy
Yin, Hong
Bartle, Dylan
2010 ASIA-PACIFIC MICROWAVE CONFERENCE, 2010, : 2315 - 2318
[44] Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model
Wang, Bixuan
Song, Qihao
Zhang, Yuhao
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (12) : 16091 - 16102
[45] A Physics-Based 1-D Equivalent Circuit Model for an AlGaN/GaN HEMT
Pedro, Jose C.
Nunes, Luis C.
Alavijeh, Ahmad Shafiei
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2024, 72 (10) : 5615 - 5623
[46] Measurement-base thermal circuit modeling of GaN HEMT
Ito, S.
Taniguchi, Y.
Tanaka, A.
Suga, T.
Wakejima, A.
2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2022, : 602 - 604
[47] Broadband GaN HEMT microwave integrated circuit for space applications
Osawa, K., 2018, Sumitomo Electric Industries Ltd.
[48] Evaluation of radiated emission of GaN-HEMT switching circuit
Ide, Toshihide
Kaji, Ryousaku
Shimizu, Mitsuaki
Mizutani, Kenji
Ueno, Hiroaki
Otsuka, Nobuyuki
Ueda, Tetsuzo
Tanaka, Tsuyoshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4): : 936 - 939
[49] Design Considerations of the Gate Drive Circuit for GaN HEMT Devices
Niu, Yuan-Chao
Huang, Ying-Ting
Chen, Chia-Lin
Chen, Yaow-Ming
2018 ASIAN CONFERENCE ON ENERGY, POWER AND TRANSPORTATION ELECTRIFICATION (ACEPT), 2018,
[50] Equivalent Circuit Model for GaN-HEMTs in a Switching Simulation
Nakajima, Akira
Takao, Kazuto
Shimizu, Mitsuaki
Okumura, Hajime
Ohashi, Hiromichi
INTELEC 08 - 30TH INTERNATIONAL TELECOMMUNICATIONS ENERGY, VOLS 1 AND 2, 2008, : 488 - 491

← 1 2 3 4 5 →