GaN HEMT Compact Model for Circuit Simulation

被引：0

作者：

Syamal, Binit ^{[1
]}

Ben Chiah, Siau ^{[1
]}

Zhou, Xing ^{[1
]}

Ajaykumar, Arjun ^{[1
]}

Anand, M. J. ^{[1
]}

Ng, Geok Ing ^{[1
]}

Arulkumaran, S. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore

[2] Nanyang Technol Univ, Temasek Labs NTU, Singapore, Singapore

来源：

PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年

关键词：

Buffer doping; compact modeling; GaN HEMTs; surface potential; Xsim;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface potential based scalable compact model for GaN high electron-mobility transistors (HEMTs) is presented in this work. Based on the unified regional surface potential approach (URSP) which considers subthreshold, moderate- and strong-inversion regions, we have modeled the variation of Fermi level (E-f) with respect to gate voltage (V-g). GaN buffer doping has been considered for obtaining the subthreshold regional solution using classical charge-voltage equation. The moderate- and strong-inversion models are derived from the coupled Poisson-Schrodinger solutions. Model scalability is presented by incorporating short channel effects (SCEs) and is validated with TCAD as well as measurement data with good match.

引用

页码：535 / 538

页数：4

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