Modeling electron transport in copper interconnect microstructures

被引:0
|
作者
Nicholson, Don M. [1 ]
Namilae, Sirish [1 ]
Radhakrishnan, Bala [1 ]
Zhang, X. -G [1 ]
Kulkarni, Nagraj
机构
[1] Oak Ridge Natl Lab, Div Math & Comp Sci, Oak Ridge, TN 37831 USA
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Present efforts to minimize the resistivity of copper interconnects are discussed in terms of a comprehensive understanding of microstructure and electron scattering. A general approach for modeling resistivity that includes Monte-Carlo simulation of grain growth, first-principles modeling for grain boundary (GB) and interfacial resistivities, and a stochastic simulation for electron transport is presented. Determination of GB resistivities for Sigma 3 twin boundaries and Sigma 5 twist boundaries serve to illustrate steps in this approach.
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页码:595 / 599
页数:5
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