Modeling electron transport in copper interconnect microstructures

被引：0

作者：

Nicholson, Don M. ^{[1
]}

Namilae, Sirish ^{[1
]}

Radhakrishnan, Bala ^{[1
]}

Zhang, X. -G ^{[1
]}

Kulkarni, Nagraj

机构：

[1] Oak Ridge Natl Lab, Div Math & Comp Sci, Oak Ridge, TN 37831 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007) | 2008年 / 23卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Present efforts to minimize the resistivity of copper interconnects are discussed in terms of a comprehensive understanding of microstructure and electron scattering. A general approach for modeling resistivity that includes Monte-Carlo simulation of grain growth, first-principles modeling for grain boundary (GB) and interfacial resistivities, and a stochastic simulation for electron transport is presented. Determination of GB resistivities for Sigma 3 twin boundaries and Sigma 5 twist boundaries serve to illustrate steps in this approach.

引用

页码：595 / 599

页数：5

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