Modeling electron transport in copper interconnect microstructures

被引：0
|
作者：
Nicholson, Don M. [1 ]
Namilae, Sirish [1 ]
Radhakrishnan, Bala [1 ]
Zhang, X. -G [1 ]
Kulkarni, Nagraj
机构：
[1] Oak Ridge Natl Lab, Div Math & Comp Sci, Oak Ridge, TN 37831 USA
来源：
ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007) | 2008年 / 23卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Present efforts to minimize the resistivity of copper interconnects are discussed in terms of a comprehensive understanding of microstructure and electron scattering. A general approach for modeling resistivity that includes Monte-Carlo simulation of grain growth, first-principles modeling for grain boundary (GB) and interfacial resistivities, and a stochastic simulation for electron transport is presented. Determination of GB resistivities for Sigma 3 twin boundaries and Sigma 5 twist boundaries serve to illustrate steps in this approach.
引用
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页码：595 / 599
页数：5
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