On the role of ambient oxygen in the formation of lead titanate pulsed laser deposition thin films

被引:28
|
作者
Chaoui, N
Millon, E
Muller, JF
Ecker, P
Bieck, W
Migeon, HN
机构
[1] Univ Metz, IPEM, Lab Spectrometrie Masse & Chim Laser, F-57078 Metz, France
[2] Ctr Rech Publ, Lab Anal Mat, L-1511 Luxembourg, Luxembourg
关键词
PbTiO(3); perovskite; thin films; laser ablation; oxygen transfer mechanisms;
D O I
10.1016/S0169-4332(98)00403-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Static oxygen transfer mechanisms (i.e. oxidation during the cooling step and between laser pulses) of pulsed laser deposition (PLD) lead titanate thin films have been studied by using (18)O tracing technique and d-SIMS profiling. During the cooling, it has been shown that about 15% of total oxygen content of the Film origin from ambient gas. The mechanism of oxygen transfer has been attributed to surface oxygen exchange and vacancies diffusion mechanisms. On the other hand, a non negligible ambient oxygen transfer in the film between laser pulses has been pointed out. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:256 / 260
页数:5
相关论文
共 50 条
  • [21] Role of precursors in the formation of lead zirconate titanate thin films
    N. M. Kotova
    K. A. Vorotilov
    D. S. Seregin
    A. S. Sigov
    Inorganic Materials, 2014, 50 : 612 - 616
  • [22] The role of hydrogen and oxygen gas in the growth of carbon thin films by pulsed laser deposition
    Yoshitake, T
    Nishiyama, T
    Nagayama, K
    DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 689 - 692
  • [23] Role of oxygen pressure in growth of CeAlOx thin films on Si by pulsed laser deposition
    Yan, L
    Kong, LB
    Pan, JS
    Ong, CK
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) : 594 - 597
  • [24] Role of oxygen pressure in growth of CeAIOx thin films on Si by pulsed laser deposition
    Yan, L. (iesyl@nus.edu.sg), 1600, American Institute of Physics Inc. (94):
  • [25] PULSED EXCIMER-LASER DEPOSITION AND CHARACTERIZATION OF FERROELECTRIC LEAD-ZIRCONATE-TITANATE THIN-FILMS
    CHEN, YQ
    ZHENG, LR
    ZHANG, SK
    LIN, CG
    ZOU, SC
    CHINESE SCIENCE BULLETIN, 1995, 40 (04): : 340 - 344
  • [26] Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition
    Yao, Yingbang
    Zhai, Jiwei
    Chen, Haydn
    1600, American Institute of Physics Inc. (95):
  • [27] Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition
    Yao, YB
    Zhai, JW
    Chen, HD
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) : 6341 - 6346
  • [28] Pulsed Laser Deposition and Ferroelectric Characterization of Nanostructured Perovskite Lead Zirconate Titanate (52/48) Thin Films
    Prabu, M.
    Banu, I. B. Shameem
    Vijayaraghavan, G. V.
    Gobalakrishnan, S.
    Chavali, Murthy
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (03) : 1938 - 1942
  • [29] Hard and soft lead zirconate titanate thin films deposited on flat and curved surfaces by pulsed laser deposition
    Lacey, J
    TrolierMcKinstry, S
    ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 687 - 690
  • [30] Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition
    Zhao, Jie
    Hu, Lizhong
    Liu, Weifeng
    Wang, Zhaoyang
    APPLIED SURFACE SCIENCE, 2007, 253 (14) : 6255 - 6258