Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition

被引：0

作者：

Yao, Yingbang ^{[1
]}

Zhai, Jiwei ^{[1
]}

Chen, Haydn ^{[1
]}

机构：

[1] Department of Physics, City University of Hong Kong, Kowloon, Hong Kong

来源：

| 1600年 / American Institute of Physics Inc.卷 / 95期

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摘要：

(Edited Abstract)

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[1] Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition
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[2] Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films
Chen, H. (aphchen@cityu.edu.hk), 1600, American Institute of Physics Inc. (96):
[3] Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films
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