Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

被引：0
|
作者：
Nishikawa, H [1 ]
Fukui, H [1 ]
Watanabe, E [1 ]
Ito, D [1 ]
Seol, KS [1 ]
Ohki, Y [1 ]
机构：
[1] Tokyo Metropolitan Univ, Dept Elect Engn, Hachioji, Tokyo 1920397, Japan
来源：
1998 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS, PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ISEIM.1998.741684
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：59 / 62
页数：4
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