Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

被引：0

作者：

Nishikawa, H ^{[1
]}

Fukui, H ^{[1
]}

Watanabe, E ^{[1
]}

Ito, D ^{[1
]}

Seol, KS ^{[1
]}

Ohki, Y ^{[1
]}

机构：

[1] Tokyo Metropolitan Univ, Dept Elect Engn, Hachioji, Tokyo 1920397, Japan

来源：

1998 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS, PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ISEIM.1998.741684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：59 / 62

页数：4

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