Very high temperature operation of ∼ 5.75 μm quantum cascade lasers

被引：0
|
作者：
Friedrich, A [1 ]
Scarpa, G [1 ]
Boehm, G [1 ]
Amann, MC [1 ]
机构：
[1] Tech Univ Muenchen, Walter Schottky Inst, D-85748 Garching, Germany
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have fabricated GaInAs/AlInAs strain-compensated quantum cascade lasers with InP and GaInAs cladding layers using solid-source molecular-beam epitaxy (MBE). Low threshold current densities and high temperature operation of uncoated devices, with a record value of 490 K, have been achieved in pulsed mode.
引用
收藏
页码：1567 / 1568
页数：2
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