Temperature dependence of breakdown field in p-π-n GaN diodes

被引：6

作者：

Osinsky, A ^{[1
]}

Shur, MS ^{[1
]}

Gaska, R ^{[1
]}

机构：

[1] EMCORE Corp, Somerset, NJ 08873 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷

关键词：

D O I：

10.1557/PROC-512-15

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the results of the study of the electric breakdown in p-pi-n GaN diodes. The breakdown is observed at reverse biases above 40 V and is accompanied by the formation of microplasmas. The study shows that the observed breakdown field in GaN (on the order of 1 to 2 MV/cm) increases with the temperature. This feature makes GaN very promising for high power devices and avalanche photodetectors, operating at elevated temperatures.

引用

页码：15 / 20

页数：6

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