A new method for estimating band parameters in narrow InGaAs/InAlAs quantum wells at room temperature

被引：0
|
作者：
Kotera, N
Tanaka, K
机构：
来源：
COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷
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暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A series of interband optical transitions associated with exciton absorptions have been observed in photocurrent spectra of p-i-n junctions including InGaAs/InAlAs multi-quantum wells with well widths of 5 and 10 nm. Eigen energies with consecutive quantum numbers were determined for conduction electrons and heavy holes. The energies were dependent on the square of the respective quantum numbers. The possible ranges of effective masses and band offsets were analyzed using a simple paricle-in-a-box calculation.
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页码：393 / 396
页数：4
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