Study of band nonparabolicity using electron-cyclotron resonance of InGaAs/InAlAs quantum wells below 100 T

被引：2
|
作者：
Shibata, K
Kotera, N
Arimoto, H
Miura, N
Wang, YJ
Jones, ED
Reno, JL
Washima, M
Mishima, T
机构：
[1] Kyushu Inst Technol, Dept Comp Sci & Elect, Iizuka, Fukuoka 8208502, Japan
[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba, Japan
[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
[5] Hitachi Cable Ltd, Tsuchiura, Ibaraki, Japan
[6] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期
关键词：
nonparabolicity; cyclotron resonance; quantum wells;
D O I：
10.1016/S1386-9477(01)00473-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Nonparabolic tendency of conduction subbands in InGaAs/InAlAs quantum wells (QWS), lattice-matched to InP, were studied using cyclotron resonance (CR) because its confinement potential was stronger than in InGaAs/InP and GaAs/GaAlAs QWs. Thickness of InGaAs well was 5-10 nm. Barrier thickness was more than 10 nm. Field-scanned pulse CR and wavelength-scanned CR were observed. CR energy changed sublinearly with magnetic field. This curve agreed with our calculation, based on Kane's three-level band theory and Landau quantization. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：566 / 569
页数：4
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